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Dopant concentration imaging in crystalline silicon wafers by band-to-band photoluminescence

Lim, S. Y.; Phang, S. P.; Trupke, T.; Cuevas, A.; Macdonald, D.


In this work, we present two techniques for spatially resolved determination of the dopant density in silicon wafers. The first technique is based on measuring the formation rate of iron-acceptor pairs, which is monitored by band-to-band photoluminescence in low injection. This method provides absolute boron concentration images on p-type wafers, even if compensating dopants such as phosphorus are present, without reference to other techniques. The second technique is based on photoluminescence...[Show more]

CollectionsANU Research Publications
Date published: 2011-12-08
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.3664859


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