Dopant concentration imaging in crystalline silicon wafers by band-to-band photoluminescence
In this work, we present two techniques for spatially resolved determination of the dopant density in silicon wafers. The first technique is based on measuring the formation rate of iron-acceptor pairs, which is monitored by band-to-band photoluminescence in low injection. This method provides absolute boron concentration images on p-type wafers, even if compensating dopants such as phosphorus are present, without reference to other techniques. The second technique is based on photoluminescence...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Lim_Dopant_concentration_imaging_2011.pdf||Published Version||1.85 MB||Adobe PDF|
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