Lim, S. Y.; Phang, S. P.; Trupke, T.; Cuevas, A.; Macdonald, D.
In this work, we present two techniques for spatially resolved determination of the dopant density in silicon wafers. The first technique is based on measuring the formation rate of iron-acceptor pairs, which is monitored by band-to-band photoluminescence in low injection. This method provides absolute boron concentration images on p-type wafers, even if compensating dopants such as phosphorus are present, without reference to other techniques. The second technique is based on photoluminescence...[Show more]
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.