Surface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al2O3
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Black, Lachlan E.; McIntosh, Keith R.
Description
Atmospheric pressure chemical vapor deposition of Al₂O₃ is shown to provide excellent passivation of crystalline silicon surfaces.Surface passivation,permittivity, and refractive index are investigated before and after annealing for deposition temperatures between 330 and 520 °C. Deposition temperatures >440 °C result in the best passivation, due to both a large negative fixed charge density (∼2 × 10¹² cm⁻²) and a relatively low interface defect density (∼1 × 10¹¹ eV⁻¹ cm⁻²), with or without an...[Show more]
Collections | ANU Research Publications |
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Date published: | 2012-05-16 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/70391 |
Source: | Applied Physics Letters |
DOI: | 10.1063/1.4718596 |
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01_Black_Surface_passivation_of_c-Si_by_2012.pdf | Published Version | 623.75 kB | Adobe PDF |
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