Surface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al2O3
Atmospheric pressure chemical vapor deposition of Al₂O₃ is shown to provide excellent passivation of crystalline silicon surfaces.Surface passivation,permittivity, and refractive index are investigated before and after annealing for deposition temperatures between 330 and 520 °C. Deposition temperatures >440 °C result in the best passivation, due to both a large negative fixed charge density (∼2 × 10¹² cm⁻²) and a relatively low interface defect density (∼1 × 10¹¹ eV⁻¹ cm⁻²), with or without an...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Black_Surface_passivation_of_c-Si_by_2012.pdf||Published Version||623.75 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.