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Surface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al2O3

Black, Lachlan E.; McIntosh, Keith R.


Atmospheric pressure chemical vapor deposition of Al₂O₃ is shown to provide excellent passivation of crystalline silicon surfaces.Surface passivation,permittivity, and refractive index are investigated before and after annealing for deposition temperatures between 330 and 520 °C. Deposition temperatures >440 °C result in the best passivation, due to both a large negative fixed charge density (∼2 × 10¹² cm⁻²) and a relatively low interface defect density (∼1 × 10¹¹ eV⁻¹ cm⁻²), with or without an...[Show more]

CollectionsANU Research Publications
Date published: 2012-05-16
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.4718596


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