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Temperature dependent carrier lifetime studies of Mo in crystalline silicon

Paudyal, Bijaya B.; McIntosh, Keith R.; Macdonald, Daniel H.; Coletti, Gianluca


The capture cross sections of both electronsσn and holes σp were determined for interstitialmolybdenum in crystalline silicon over the temperature range of −110 to 150 °C. Carrier lifetimemeasurements were performed on molybdenum-contaminated silicon using a temperature controlled photoconductance instrument. Injection dependent lifetime spectroscopy was applied at each temperature to calculate σp and σn. This analysis involved a novel approach that independently determined the capture cross...[Show more]

CollectionsANU Research Publications
Date published: 2010-03-09
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.3309833


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