Temperature dependent carrier lifetime studies of Mo in crystalline silicon
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Paudyal, Bijaya B.; McIntosh, Keith R.; Macdonald, Daniel H.; Coletti, Gianluca
Description
The capture cross sections of both electronsσn and holes σp were determined for interstitialmolybdenum in crystalline silicon over the temperature range of −110 to 150 °C. Carrier lifetimemeasurements were performed on molybdenum-contaminated silicon using a temperature controlled photoconductance instrument. Injection dependent lifetime spectroscopy was applied at each temperature to calculate σp and σn. This analysis involved a novel approach that independently determined the capture cross...[Show more]
Collections | ANU Research Publications |
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Date published: | 2010-03-09 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/70387 |
Source: | Journal of Applied Physics |
DOI: | 10.1063/1.3309833 |
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01_Paudyal_Temperature_dependent_carrier_2010.pdf | Published Version | 584.72 kB | Adobe PDF |
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