Temperature dependent carrier lifetime studies of Mo in crystalline silicon
The capture cross sections of both electronsσn and holes σp were determined for interstitialmolybdenum in crystalline silicon over the temperature range of −110 to 150 °C. Carrier lifetimemeasurements were performed on molybdenum-contaminated silicon using a temperature controlled photoconductance instrument. Injection dependent lifetime spectroscopy was applied at each temperature to calculate σp and σn. This analysis involved a novel approach that independently determined the capture cross...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Paudyal_Temperature_dependent_carrier_2010.pdf||Published Version||584.72 kB||Adobe PDF|
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