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Generation and annihilation of boron–oxygen-related recombination centers in compensated p- and n-type silicon

Lim, Bianca; Rougieux, Fiacre; Macdonald, Daniel; Bothe, Karsten; Schmidt, Jan


The impact of boron–oxygen-related recombination centers as well as their defect kinetics have been intensely studied in boron-doped oxygen-rich p-type crystalline silicon. Experimental data for the defect in simultaneously boron- and phosphorus-doped compensated p- and n-type silicon, however, is sparse. In this study, we present time-resolved carrier lifetime measurements on Czochralski-grown silicon (Cz-Si) doped with both boron and phosphorus under illumination at 30 °C(defectgeneration) as...[Show more]

CollectionsANU Research Publications
Date published: 2010-11-30
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.3511741


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