Effect of crystallization on the reliability of unipolar resistive-switching in HfO 2 -based dielectrics
The electroforming and unipolar resistive switching characteristics of as-deposited and annealed HfO2 and Hf0.6Si 0.4O2 films are reported. The reliability of HfO 2 devices is shown to be significantly degraded by annealing at 600 °C, during which the fi
|Collections||ANU Research Publications|
|Source:||Current Applied Physics|
|01_Nawaz (Saleh)_Effect_of_crystallization_on_2014.pdf||1.53 MB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.