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Effect of crystallization on the reliability of unipolar resistive-switching in HfO 2 -based dielectrics

Nawaz (Saleh), Muhammad; Venkatachalam, Dinesh; Elliman, Robert

Description

The electroforming and unipolar resistive switching characteristics of as-deposited and annealed HfO2 and Hf0.6Si 0.4O2 films are reported. The reliability of HfO 2 devices is shown to be significantly degraded by annealing at 600 °C, during which the fi

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
URI: http://hdl.handle.net/1885/70197
Source: Current Applied Physics
DOI: 10.1016/j.cap.2013.11.017

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