Iron-rich particles in heavily contaminated multicrystalline silicon wafers and their response to phosphorus gettering
Heavily contaminated multicrystalline silicon wafers have been studied using a scanning synchrotron x-ray fluorescence micro-probe, revealing the presence of iron-rich particles located along grain boundaries. These particles were found to be partially dissolved and removed during phosphorus gettering treatments at 900 or 1000°C for times of up to 100 min, with increased gettering efficiency at higher temperatures and times. Annealing without the phosphorus gettering layer present at the wafer...[Show more]
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