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Iron-rich particles in heavily contaminated multicrystalline silicon wafers and their response to phosphorus gettering

MacDonald, Daniel; Phang, Sieu Pheng; Rougieux, Fiacre; Lim, Siew Yee; Paterson, David; Howard, Daryl; de Jonge, Martin; Ryan, Christopher G

Description

Heavily contaminated multicrystalline silicon wafers have been studied using a scanning synchrotron x-ray fluorescence micro-probe, revealing the presence of iron-rich particles located along grain boundaries. These particles were found to be partially dissolved and removed during phosphorus gettering treatments at 900 or 1000°C for times of up to 100 min, with increased gettering efficiency at higher temperatures and times. Annealing without the phosphorus gettering layer present at the wafer...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
URI: http://hdl.handle.net/1885/70099
Source: Semiconductor Science and Technology
DOI: 10.1088/0268-1242/27/12/125016

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