Wan, Yimao; Bullock, James; Cuevas, Andres
This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited tantalum oxide (Ta<inf>2</inf>O<inf>5</inf>) underneath plasma enhanced chemical vapour deposited silicon nitride (SiN<inf>x</inf>). Cross-sectional transmission electron microscopy imaging shows an approximately 2 nm thick interfacial layer between Ta<inf>2</inf>O<inf>5</inf> and c-Si. Surface recombination velocities as low as 5.0 cm/s and 3.2 cm/s are attained on p-type 0.8 Ω·cm...[Show more]
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