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InxGa1-xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology

Ameruddin, Amira; Fonseka, Aruni; Caroff, Philippe; Wong-Leung, Yin-Yin (Jennifer); Op het Veld, Roy; Boland, Jessica L.; Johnston, Michael B; Jagadish, Chennupati; Tan, Hark Hoe

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Obtaining compositional homogeneity without compromising morphological or structural quality is one of the biggest challenges in growing ternary alloy compound semiconductor nanowires. Here we report growth of Au-seeded In<inf>xGa</inf>1-xAs nanowires via metal-organic vapour phase epitaxy with uniform composition, morphology and pure wurtzite (WZ) crystal phase by carefully optimizing growth temperature and V/III ratio. We find that high growth temperatures allow the In<inf>xGa</inf>1-xAs...[Show more]

dc.contributor.authorAmeruddin, Amira
dc.contributor.authorFonseka, Aruni
dc.contributor.authorCaroff, Philippe
dc.contributor.authorWong-Leung, Yin-Yin (Jennifer)
dc.contributor.authorOp het Veld, Roy
dc.contributor.authorBoland, Jessica L.
dc.contributor.authorJohnston, Michael B
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-12-10T23:36:07Z
dc.identifier.issn0957-4484
dc.identifier.urihttp://hdl.handle.net/1885/70008
dc.description.abstractObtaining compositional homogeneity without compromising morphological or structural quality is one of the biggest challenges in growing ternary alloy compound semiconductor nanowires. Here we report growth of Au-seeded In<inf>xGa</inf>1-xAs nanowires via metal-organic vapour phase epitaxy with uniform composition, morphology and pure wurtzite (WZ) crystal phase by carefully optimizing growth temperature and V/III ratio. We find that high growth temperatures allow the In<inf>xGa</inf>1-xAs composition to be more uniform by suppressing the formation of typically observed spontaneous In-rich shells. A low V/III ratio results in the growth of pure WZ phase In<inf>xGa</inf>1-xAs nanowires with uniform composition and morphology while a high V/III ratio allows pure zinc-blende (ZB) phase to form. Ga incorporation is found to be dependent on the crystal phase favouring higher Ga concentration in ZB phase compared to the WZ phase. Tapering is also found to be more prominent in defective nanowires hence it is critical to maintain the highest crystal structure purity in order to minimize tapering and inhomogeneity. The InP capped pure WZ In<inf>0.65Ga</inf>0.35As core-shell nanowire heterostructures show 1.54 μm photoluminescence, close to the technologically important optical fibre telecommunication wavelength, which is promising for application in photodetectors and nanoscale lasers.
dc.publisherInstitute of Physics Publishing
dc.sourceNanotechnology
dc.titleIn<inf>x</inf>Ga<inf>1-x</inf>As nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume26
dc.date.issued2015
local.identifier.absfor100700 - NANOTECHNOLOGY
local.identifier.absfor100706 - Nanofabrication, Growth and Self Assembly
local.identifier.absfor020400 - CONDENSED MATTER PHYSICS
local.identifier.ariespublicationa383154xPUB2192
local.type.statusPublished Version
local.contributor.affiliationAmeruddin, Amira, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationFonseka, Aruni, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationCaroff, Philippe, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationOp het Veld, Roy, University of Oxford
local.contributor.affiliationBoland, Jessica L., University of Oxford
local.contributor.affiliationJohnston, Michael B, University of Oxford
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.issue20
local.bibliographicCitation.startpage1
local.bibliographicCitation.lastpage10
local.identifier.doi10.1088/0957-4484/26/20/205604
dc.date.updated2015-12-10T11:51:01Z
local.identifier.scopusID2-s2.0-84929470588
CollectionsANU Research Publications

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