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InxGa1-xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology

Ameruddin, Amira; Fonseka, Aruni; Caroff, Philippe; Wong-Leung, Yin-Yin (Jennifer); Op het Veld, Roy; Boland, Jessica L.; Johnston, Michael B; Tan, Hoe Hark; Jagadish, Chennupati

Description

Obtaining compositional homogeneity without compromising morphological or structural quality is one of the biggest challenges in growing ternary alloy compound semiconductor nanowires. Here we report growth of Au-seeded In<inf>xGa</inf>1-xAs nanowires via metal-organic vapour phase epitaxy with uniform composition, morphology and pure wurtzite (WZ) crystal phase by carefully optimizing growth temperature and V/III ratio. We find that high growth temperatures allow the In<inf>xGa</inf>1-xAs...[Show more]

CollectionsANU Research Publications
Date published: 2015
Type: Journal article
URI: http://hdl.handle.net/1885/70008
Source: Nanotechnology
DOI: 10.1088/0957-4484/26/20/205604

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