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Temperature dependence of the radiative recombination coefficient in crystalline silicon from spectral photoluminescence

Nguyen, Hieu; Baker-Finch, Simeon; MacDonald, Daniel

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The radiative recombination coefficient B(T) in crystalline silicon is determined for the temperature range 90-363 K, and in particular from 270 to 350 K with an interval of 10 K, where only sparse data are available at present. The band-band absorption coefficient established recently by Nguyen et al. [J. Appl. Phys. 115, 043710 (2014)] via photoluminescence spectrum measurements is employed to compute the values of B(T) at various temperatures. The results agree very well with literature data...[Show more]

dc.contributor.authorNguyen, Hieu
dc.contributor.authorBaker-Finch, Simeon
dc.contributor.authorMacDonald, Daniel
dc.date.accessioned2015-12-10T23:35:32Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/69897
dc.description.abstractThe radiative recombination coefficient B(T) in crystalline silicon is determined for the temperature range 90-363 K, and in particular from 270 to 350 K with an interval of 10 K, where only sparse data are available at present. The band-band absorption coefficient established recently by Nguyen et al. [J. Appl. Phys. 115, 043710 (2014)] via photoluminescence spectrum measurements is employed to compute the values of B(T) at various temperatures. The results agree very well with literature data from Trupke et al. [J. Appl. Phys. 94, 4930 (2003).] We present a polynomial parameterization describing the temperature dependence of the product of B(T) and the square of the intrinsic carrier density. We also find that B(T) saturates at a near constant value at room temperature and above for silicon samples with relatively low free carrier densities.
dc.publisherAmerican Institute of Physics (AIP)
dc.rightsCopyright Information: © 2014 AIP Publishing LLC. http://www.sherpa.ac.uk/romeo/issn/0003-6951/..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 14/09/15
dc.rightsAuthor/s retain copyright
dc.sourceApplied Physics Letters
dc.titleTemperature dependence of the radiative recombination coefficient in crystalline silicon from spectral photoluminescence
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume104
dc.date.issued2014
local.identifier.absfor090600 - ELECTRICAL AND ELECTRONIC ENGINEERING
local.identifier.ariespublicationU3488905xPUB2152
local.type.statusPublished Version
local.contributor.affiliationNguyen, Hieu, College of Engineering and Computer Science, ANU
local.contributor.affiliationBaker-Finch, Simeon, College of Engineering and Computer Science, ANU
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.bibliographicCitation.issue11
local.bibliographicCitation.startpage1
local.bibliographicCitation.lastpage3
local.identifier.doi10.1063/1.4869295
dc.date.updated2016-02-24T10:00:52Z
local.identifier.scopusID2-s2.0-84897885687
local.identifier.thomsonID000333252300031
dcterms.accessRightsOpen Access
CollectionsANU Research Publications

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