Temperature dependence of the radiative recombination coefficient in crystalline silicon from spectral photoluminescence
The radiative recombination coefficient B(T) in crystalline silicon is determined for the temperature range 90-363 K, and in particular from 270 to 350 K with an interval of 10 K, where only sparse data are available at present. The band-band absorption coefficient established recently by Nguyen et al. [J. Appl. Phys. 115, 043710 (2014)] via photoluminescence spectrum measurements is employed to compute the values of B(T) at various temperatures. The results agree very well with literature data...[Show more]
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|Source:||Applied Physics Letters|
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