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Low surface recombination velocity by low-absorption silicon nitride on c-Si

Wan, Yimao; McIntosh, Keith; Thomson, Andrew; Cuevas, Andres

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We demonstrate that nearly stoichiometric amorphous silicon nitride (SiN x) can exhibit excellent surface passivation on both p-and n-type c-Si, as well as low absorption at short wavelengths. The key process to obtain such a SiN x is the optimized deposition pressure. The effective carrier lifetimes of these samples exceed the commonly accepted intrinsic upper limit over a wide range of excess carrier densities. We achieve a low S eff,UL of 1.6 cm/s on 0.85-Ω·cm p-type and immeasurably low...[Show more]

dc.contributor.authorWan, Yimao
dc.contributor.authorMcIntosh, Keith
dc.contributor.authorThomson, Andrew
dc.contributor.authorCuevas, Andres
dc.date.accessioned2015-12-10T23:35:31Z
dc.identifier.issn2156-3381
dc.identifier.urihttp://hdl.handle.net/1885/69885
dc.description.abstractWe demonstrate that nearly stoichiometric amorphous silicon nitride (SiN x) can exhibit excellent surface passivation on both p-and n-type c-Si, as well as low absorption at short wavelengths. The key process to obtain such a SiN x is the optimized deposition pressure. The effective carrier lifetimes of these samples exceed the commonly accepted intrinsic upper limit over a wide range of excess carrier densities. We achieve a low S eff,UL of 1.6 cm/s on 0.85-Ω·cm p-type and immeasurably low Seff,UL on 0.47-Ω·cm n-type silicon passivated by the SiN x deposited at 290 °C. Capacitance-voltage (C-V) measurements reveal that this SiNx has a density of interface states of 3.0 × 1011 eV-1cm-2 at midgap and an insulator charge of 5.6 × 1011 cm-2. By comparing the measured injection-dependent Seff,UL with calculated S eff,UL by an extended Shockley-Read-Hall (SRH) model, we conclude that either Defect A or B (or both) observed by Schmidt is likely to dominate the surface recombination at our Si-SiNx interface. In addition to the outstanding surface passivation, this SiN x has a low absorption coefficient at short wavelengths. Compared with Si-rich SiNx of an equivalent passivation, the optimized SiN x would enhance the photogenerated current density by more than 0.66 mA/cm2or 1.40 mA/cm 2 for solar cells encapsulated in glass/ethylene-vinyl acetate or operating in air, respectively. The SiNx described here is ideally suited for high-efficiency solar cells, which require good surface passivation and low absorption from their front surface coatings.
dc.publisherIEEE Electron Devices Society
dc.sourceIEEE Journal of Photovoltaics
dc.subjectKeywords: Absorption coefficients; Capacitance voltage measurements; Density of interface state; Deposition pressures; Front surfaces; High-efficiency solar cells; Key process; N type silicon; P-type; Photogenerated current density; Shockley-Read-Hall models; Short Absorption; amorphous materials; charge carrier lifetime; silicon
dc.titleLow surface recombination velocity by low-absorption silicon nitride on c-Si
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume3
dc.date.issued2013
local.identifier.absfor090600 - ELECTRICAL AND ELECTRONIC ENGINEERING
local.identifier.absfor091200 - MATERIALS ENGINEERING
local.identifier.ariespublicationf5625xPUB2149
local.type.statusPublished Version
local.contributor.affiliationWan, Yimao, College of Engineering and Computer Science, ANU
local.contributor.affiliationMcIntosh, Keith, PV Lighthouse
local.contributor.affiliationThomson, Andrew, College of Engineering and Computer Science, ANU
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.issue1
local.bibliographicCitation.startpage554
local.bibliographicCitation.lastpage559
local.identifier.doi10.1109/JPHOTOV.2012.2215014
local.identifier.absseo850504 - Solar-Photovoltaic Energy
dc.date.updated2016-02-24T08:55:08Z
local.identifier.scopusID2-s2.0-84871762527
local.identifier.thomsonID000318434000087
CollectionsANU Research Publications

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