Wan, Yimao; McIntosh, Keith; Thomson, Andrew; Cuevas, Andres
We demonstrate that nearly stoichiometric amorphous silicon nitride (SiN x) can exhibit excellent surface passivation on both p-and n-type c-Si, as well as low absorption at short wavelengths. The key process to obtain such a SiN x is the optimized deposition pressure. The effective carrier lifetimes of these samples exceed the commonly accepted intrinsic upper limit over a wide range of excess carrier densities. We achieve a low S eff,UL of 1.6 cm/s on 0.85-Ω·cm p-type and immeasurably low...[Show more]
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