Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking
We demonstrate that ion implantation can be used for response time tailoring to create high-performance indium gallium arsenide (InGaAs) quantum well semiconductor saturable absorber mirrors (SESAMs). The design and manufacture of the SESAMs are described, and their nonlinear optical and temporal responses, relevant to the mode-locking of picosecond type pulses, are given. The implanted devices shown here have response times as short as 11 ps, compared with several hundred picoseconds without...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Physics D: Applied Physics|
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