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Insights for void formation in ion-implanted Ge

Darby, B.L.; Yates, B.R.; Rudawski, N G; Jones, K S; Kontos, A.; Elliman, Robert


The formation of voids in ion-implanted Ge was studied as a function of ion implantation energy and dose. (001) Ge substrates were self-implanted at energies of 20-300 keV to doses of 1.0 × 1013-1.0 × 1017 cm- 2. Transmission electron microscopy reveale

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
Source: Thin Solid Films
DOI: 10.1016/j.tsf.2011.03.040


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