Measuring dopant concentrations in p-type silicon using iron-acceptor pairing monitored by band-to-band photoluminescence
This paper introduces a photoluminescence-based technique for determining the acceptor concentration in silicon wafers by measuring the formation rate of iron-acceptor pairs. This rate is monitored by band-to-band photoluminescence in low injection, the intensity of which is proportional to the carrier lifetime. The technique is demonstrated with an iron-implanted float zone silicon wafer, heavily compensated Czochralski-grown silicon wafers with iron contamination and an upgraded...[Show more]
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|Source:||Solar Energy Materials and Solar Cells|
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