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Measuring dopant concentrations in p-type silicon using iron-acceptor pairing monitored by band-to-band photoluminescence

Lim, Siew Yee; MacDonald, Daniel


This paper introduces a photoluminescence-based technique for determining the acceptor concentration in silicon wafers by measuring the formation rate of iron-acceptor pairs. This rate is monitored by band-to-band photoluminescence in low injection, the intensity of which is proportional to the carrier lifetime. The technique is demonstrated with an iron-implanted float zone silicon wafer, heavily compensated Czochralski-grown silicon wafers with iron contamination and an upgraded...[Show more]

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
Source: Solar Energy Materials and Solar Cells
DOI: 10.1016/j.solmat.2011.04.037


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