Measuring dopant concentrations in p-type silicon using iron-acceptor pairing monitored by band-to-band photoluminescence
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Lim, Siew Yee; MacDonald, Daniel
Description
This paper introduces a photoluminescence-based technique for determining the acceptor concentration in silicon wafers by measuring the formation rate of iron-acceptor pairs. This rate is monitored by band-to-band photoluminescence in low injection, the intensity of which is proportional to the carrier lifetime. The technique is demonstrated with an iron-implanted float zone silicon wafer, heavily compensated Czochralski-grown silicon wafers with iron contamination and an upgraded...[Show more]
Collections | ANU Research Publications |
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Date published: | 2011 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/69663 |
Source: | Solar Energy Materials and Solar Cells |
DOI: | 10.1016/j.solmat.2011.04.037 |
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