Skip navigation
Skip navigation

Silicon surface passivation by anodic oxidation annealed at 400C

Grant, Nicholas; McIntosh, Keith

Description

We investigate the surface passivation attained by anodic oxidation of silicon wafers. A low surface recombination velocity S of 20-35 cm/s is achieved by submersing silicon wafers in nitric acid (HNO3) and applying a constant voltage, followed by annealing at 400° C in oxygen and then forming gas. We examine the SiO2 thickness as a function of HNO3 concentration and conclude that water is the primary source of oxygen for the anodic oxidation process. It is demonstrated that the HNO3 purity has...[Show more]

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
URI: http://hdl.handle.net/1885/69054
Source: ECS Journal of Solid State Science and Technology
DOI: 10.1149/2.009402jss

Download

File Description SizeFormat Image
01_Grant_Silicon_surface_passivation_by_2014.pdf643.12 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator