Grant, Nicholas; McIntosh, Keith
We investigate the surface passivation attained by anodic oxidation of silicon wafers. A low surface recombination velocity S of 20-35 cm/s is achieved by submersing silicon wafers in nitric acid (HNO3) and applying a constant voltage, followed by annealing at 400° C in oxygen and then forming gas. We examine the SiO2 thickness as a function of HNO3 concentration and conclude that water is the primary source of oxygen for the anodic oxidation process. It is demonstrated that the HNO3 purity has...[Show more]
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