Mn implantation for new applications of 4H-SiC
Linnarsson, M K; Wong-Leung, Jennifer; Hallen, A; Khartsev, S.I.; Grishin, A.M.
Structural disorder and lattice recovery of high dose, manganese implanted, semiinsulating, 4H-SiC have been studied by secondary ion mass spectrometry, Rutherford backscattering in channeling directions, visible-to-near infrared optical spectroscopy as well as with transmission electron microscopy. After heat treatment at 1400 and 1600 °C, a substantial rearrangement of manganese is observed in the implanted region. However, the crystal has not been fully recovered. More disorder remains in...[Show more]
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|Source:||Materials Science Forum|
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