Mn implantation for new applications of 4H-SiC

Abstract

Structural disorder and lattice recovery of high dose, manganese implanted, semiinsulating, 4H-SiC have been studied by secondary ion mass spectrometry, Rutherford backscattering in channeling directions, visible-to-near infrared optical spectroscopy as well as with transmission electron microscopy. After heat treatment at 1400 and 1600 °C, a substantial rearrangement of manganese is observed in the implanted region. However, the crystal has not been fully recovered. More disorder remains in the [1123] compared to the [0001] channel direction. Stacking faults, voids and 3C inclusions are observed in the implanted region. A Mn containing phase has most likely formed.