Mn implantation for new applications of 4H-SiC
Structural disorder and lattice recovery of high dose, manganese implanted, semiinsulating, 4H-SiC have been studied by secondary ion mass spectrometry, Rutherford backscattering in channeling directions, visible-to-near infrared optical spectroscopy as well as with transmission electron microscopy. After heat treatment at 1400 and 1600 °C, a substantial rearrangement of manganese is observed in the implanted region. However, the crystal has not been fully recovered. More disorder remains in...[Show more]
|Collections||ANU Research Publications|
|Source:||Materials Science Forum|
|01_Linnarsson_Mn_implantation_for_new_2012.pdf||481.6 kB||Adobe PDF||Request a copy|
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