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Effective silicon surface passivation by atomic layer deposited Al 2 O 3 /TiO 2 stacks

Suh, Dong Chul; Weber, Klaus

Description

In this work atomic layer deposition of Al2O3 and TiO2 has been used to obtain dielectric stacks for passivation of silicon surfaces. Our experiments on n- and p-type silicon wafers deposited by thin Al2O3/TiO2 stacks show that a considerably improved passivation is obtained compared to the Al2O3 single layer. For Al2O3 films thinner than 20 nm the emitter saturation current density decreases with increasing TiO2 thickness. Especially the passivation of ultrathin (∼5 nm) Al2O3 is very...[Show more]

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
URI: http://hdl.handle.net/1885/68886
Source: Physica Status Solidi: Rapid Research Letters
DOI: 10.1002/pssr.201308134

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