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Activation energy and blistering rate in hydrogen-implanted semiconductors

Pyke, Daniel; Elliman, Robert; McCallum, Jeffrey C


Hydrogen blister rates in Si (100), Si (111) and Ge (100) substrates are compared as a function of annealing temperature and time, for a range of implant energies and fluences. For each material, the rate of blister formation was found to exhibit Arrhenius behavior and to be characterised by a single activation energy over the temperature range examined. The extracted activation energies were 2.28±0.03 eV, 2.17±0.06 eV and 1.4±0.03 eV for (100) Si; (111) Si and (100) Ge, respectively. These...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Conference paper
Source: Materials Research Society Symposium Proceedings
DOI: 10.1557/opl.2012.677


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