Skip navigation
Skip navigation

Activation energy and blistering rate in hydrogen-implanted semiconductors

Pyke, Daniel; Elliman, Robert; McCallum, Jeffrey C

Description

Hydrogen blister rates in Si (100), Si (111) and Ge (100) substrates are compared as a function of annealing temperature and time, for a range of implant energies and fluences. For each material, the rate of blister formation was found to exhibit Arrhenius behavior and to be characterised by a single activation energy over the temperature range examined. The extracted activation energies were 2.28±0.03 eV, 2.17±0.06 eV and 1.4±0.03 eV for (100) Si; (111) Si and (100) Ge, respectively. These...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Conference paper
URI: http://hdl.handle.net/1885/68736
Source: Materials Research Society Symposium Proceedings
DOI: 10.1557/opl.2012.677

Download

File Description SizeFormat Image
01_Pyke_Activation_energy_and_2012.pdf732.8 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator