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Crystallization behaviors of ZnxSb100-x thin films for ultralong data retention phase change memory applications

Chen, Yimin; Wang, Guoxiang; Shen, Xiang; Xu, Tiefeng; Wang, Rongping; Wu, Liangcai; Lu, Yegang; Li, Junjian; Dai, Shixun; Nie, Qiuhua

Description

ZnxSb100-x films with low Zn content are crystallized in a single-step process with Sb, while the film (Zn/Sb ratio is about 1:1) exhibits a two-step crystallization process with ZnSb metastable and stable phases. Importantly, ZnSb films have higher crystallization temperature (~257 °C), larger crystalline activation energy (~5.63 eV), better 10 year-data-retention (~201 °C) and lower melting temperature (~500 °C).

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
URI: http://hdl.handle.net/1885/68726
Source: CrystEngComm
DOI: 10.1039/c3ce42024h

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