Skip navigation
Skip navigation

Crystallization behaviors of ZnxSb100-x thin films for ultralong data retention phase change memory applications

Chen, Yimin; Wang, Guoxiang; Shen, Xiang; Xu, Tiefeng; Wang, Rongping; Wu, Liangcai; Lu, Yegang; Li, Junjian; Dai, Shixun; Nie, Qiuhua


ZnxSb100-x films with low Zn content are crystallized in a single-step process with Sb, while the film (Zn/Sb ratio is about 1:1) exhibits a two-step crystallization process with ZnSb metastable and stable phases. Importantly, ZnSb films have higher crystallization temperature (~257 °C), larger crystalline activation energy (~5.63 eV), better 10 year-data-retention (~201 °C) and lower melting temperature (~500 °C).

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
Source: CrystEngComm
DOI: 10.1039/c3ce42024h


File Description SizeFormat Image
01_Chen_Crystallization_behaviors_of_2014.pdf2.9 MBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator