Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors
Quantum dot infrared photodetectors have generated significant interest in recent years. They have the potential to outperform quantum well detectors in terms of normal-incidence responsivity and higher operating temperatures. Here, an InGaAs/GaAs dots-in-a-well detector grown by metal-organic chemical vapor deposition is spectrally tuned by rapid thermal annealing under dielectric layers. Four films are considered: SiO2 deposited by both plasma-enhanced chemical vapor deposition and sputter...[Show more]
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|Source:||IEEE Journal of Quantum Electronics|
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