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Accurate measurement of the formation rate of iron-boron pairs in silicon

Tan, Jason; MacDonald, Daniel; Rougieux, Fiacre; Cuevas, Andres

Description

This paper presents new data regarding the formation rate of iron-boron (Fei-B) pairs in p-type crystalline silicon. Improvements in the temperature control of the sample, a reduction in measurement error of the effective lifetime of the sample after all

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
URI: http://hdl.handle.net/1885/68594
Source: Semiconductor Science and Technology
DOI: 10.1088/0268-1242/26/5/055019

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