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Interactions of Point Defects and Impurities With Open Volume Defects in Silicon

Williams, James; Ridgway, Mark C; Conway, Martin; Wong-Leung, Yin-Yin (Jennifer); Williams, Ben C; Petravic, Mladen; Fortuna, Frank Nicholas; Ruault, M-O; Bernas, Harry

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Ion implantation can produce open volume defects in silicon by one of two methods, either by H or He implantation followed by annealing to create a band of nanocavities and also by direct implantation to reasonably high doses, which results in a vacancy excess region at depths less than about half the projected ion range. This paper reviews three interesting aspects of open volume defects. In the first case, the very efficient gettering of fast diffusing metals to nanocavities formed by...[Show more]

dc.contributor.authorWilliams, James
dc.contributor.authorRidgway, Mark C
dc.contributor.authorConway, Martin
dc.contributor.authorWong-Leung, Yin-Yin (Jennifer)
dc.contributor.authorWilliams, Ben C
dc.contributor.authorPetravic, Mladen
dc.contributor.authorFortuna, Frank Nicholas
dc.contributor.authorRuault, M-O
dc.contributor.authorBernas, Harry
dc.coverage.spatialBoston USA
dc.date.accessioned2015-12-10T23:31:12Z
dc.date.available2015-12-10T23:31:12Z
dc.date.createdNovember 27 2000
dc.identifier.isbn1558995579
dc.identifier.urihttp://hdl.handle.net/1885/68517
dc.description.abstractIon implantation can produce open volume defects in silicon by one of two methods, either by H or He implantation followed by annealing to create a band of nanocavities and also by direct implantation to reasonably high doses, which results in a vacancy excess region at depths less than about half the projected ion range. This paper reviews three interesting aspects of open volume defects. In the first case, the very efficient gettering of fast diffusing metals to nanocavities formed by H-implantation is illustrated. In addition, the non-equilibrium behaviour of Cu3Si precipitation and dissolution at cavities is examined. The second example treats the interaction of irradiation-induced defects with nanocavities, particularly preferential amorphisation at open volume defects and subsequent cavity shrinkage. The final example illustrates the coalescence of excess vacancies into small voids on annealing and the use of gettering of Au to detect such open volume defects.
dc.publisherMaterials Research Society
dc.relation.ispartofseriesMaterials Research Society Meeting Fall 2000
dc.sourceMaterials Research Society Symposium Proceedings vol 647: Ion Beam Synthesis and Processing of Advanced Materials
dc.subjectKeywords: Amorphization; Annealing; Band structure; Coalescence; Crystal impurities; Dissolution; Ion implantation; Irradiation; Nanostructured materials; Point defects; Precipitation (chemical); Shrinkage; Cavity shrinkage; Copper silicide; Nanocavities; Open volu
dc.titleInteractions of Point Defects and Impurities With Open Volume Defects in Silicon
dc.typeConference paper
local.description.notesImported from ARIES
local.description.refereedYes
dc.date.issued2001
local.identifier.absfor020204 - Plasma Physics; Fusion Plasmas; Electrical Discharges
local.identifier.ariespublicationMigratedxPub1744
local.type.statusPublished Version
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationConway, Martin, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWilliams, Ben C, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationPetravic, Mladen, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationFortuna, Frank Nicholas, Universite d'Evry
local.contributor.affiliationRuault, M-O, Universite Paris
local.contributor.affiliationBernas, Harry, CNRS
local.bibliographicCitation.startpage02.4.1
local.bibliographicCitation.lastpage02.4.11
dc.date.updated2015-12-10T11:12:04Z
local.identifier.scopusID2-s2.0-0035187181
CollectionsANU Research Publications

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