Interactions of Point Defects and Impurities With Open Volume Defects in Silicon
Ion implantation can produce open volume defects in silicon by one of two methods, either by H or He implantation followed by annealing to create a band of nanocavities and also by direct implantation to reasonably high doses, which results in a vacancy excess region at depths less than about half the projected ion range. This paper reviews three interesting aspects of open volume defects. In the first case, the very efficient gettering of fast diffusing metals to nanocavities formed by...[Show more]
|Collections||ANU Research Publications|
|Source:||Materials Research Society Symposium Proceedings vol 647: Ion Beam Synthesis and Processing of Advanced Materials|
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