Low temperature growth of nanocrystalline TiO 2 films with Ar/O 2 low-field helicon plasma
TiO2 thin films were deposited on silicon wafer substrates by low-field (1<B<5mT) helicon plasma assisted reactive sputtering in a mixture of pure argon and oxygen. The influence of the positive ion density on the substrate and the post-annealing treatment on the films density, refractive index, chemical composition and crystalline structure was analysed by reflectometry, Rutherford backscattering spectroscopy (RBS) and X-ray diffraction (XRD). Amorphous TiO2 was obtained for ion density on the...[Show more]
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