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Interaction of Defects and Metals with Nanocavities in Silicon

Williams, James; Ridgway, Mark C; Conway, Martin; Wong-Leung, Jennifer; Zhu, Xiaohua; Petravic, Mladen; Fortuna, Frank Nicholas; Ruault, M-O; Bernas, Harry; Kinomura, A; Nakano, Yukihiro; Hayashi, Yasuhiko

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Ion implantation of H or He into silicon, followed by annealing can create a band of nanocavities. Such nanocavities can exhibit a range of interesting and often non-equilibrium interactions with defects and metals during subsequent implantation and annealing. This paper gives an overview of such interactions, concentrating on cavities produced by H-implantation. The evolution of cavities during annealing is briefly treated, followed by illustrations of the very efficient gettering ability of...[Show more]

dc.contributor.authorWilliams, James
dc.contributor.authorRidgway, Mark C
dc.contributor.authorConway, Martin
dc.contributor.authorWong-Leung, Jennifer
dc.contributor.authorZhu, Xiaohua
dc.contributor.authorPetravic, Mladen
dc.contributor.authorFortuna, Frank Nicholas
dc.contributor.authorRuault, M-O
dc.contributor.authorBernas, Harry
dc.contributor.authorKinomura, A
dc.contributor.authorNakano, Yukihiro
dc.contributor.authorHayashi, Yasuhiko
dc.date.accessioned2015-12-10T23:31:09Z
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/68491
dc.description.abstractIon implantation of H or He into silicon, followed by annealing can create a band of nanocavities. Such nanocavities can exhibit a range of interesting and often non-equilibrium interactions with defects and metals during subsequent implantation and annealing. This paper gives an overview of such interactions, concentrating on cavities produced by H-implantation. The evolution of cavities during annealing is briefly treated, followed by illustrations of the very efficient gettering ability of cavities for fast diffusing metals. For low metal concentrations introduced into the near-surface by implantation, the metal atoms decorate the cavity walls during annealing but can be displaced by oxygen under certain conditions. At high metal concentrations, precipitation and second phase (silicide) formation can occur at cavities but silicide formation and dissolution are found to be controlled by the availability or removal of silicon interstitials, leading to non-equilibrium behaviour. When silicon that contains cavities is irradiated with silicon ions, irradiation-induced defects interact with cavities, leading to preferential amorphisation at certain temperatures. Continued irradiation leads to cavity shrinkage during bombardment, which is most efficient when the region around the cavities is amorphised.
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Amorphization; Annealing; Dissolution; Helium; Hydrogen; Interfaces (materials); Ion bombardment; Ion implantation; Irradiation-induced defects; Nanocavities; Amorphous silicon
dc.titleInteraction of Defects and Metals with Nanocavities in Silicon
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume178
dc.date.issued2001
local.identifier.absfor020204 - Plasma Physics; Fusion Plasmas; Electrical Discharges
local.identifier.ariespublicationMigratedxPub1733
local.type.statusPublished Version
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationConway, Martin, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationZhu, Xiaohua, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationPetravic, Mladen, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationFortuna, Frank Nicholas, Universite d'Evry
local.contributor.affiliationRuault, M-O, Universite Paris
local.contributor.affiliationBernas, Harry, CNRS
local.contributor.affiliationKinomura, A, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationNakano, Yukihiro, Kyoto University
local.contributor.affiliationHayashi, Yasuhiko, Nagoya Institute of Technology
local.description.embargo2037-12-31
local.bibliographicCitation.startpage33
local.bibliographicCitation.lastpage43
local.identifier.doi10.1016/S0168-583X(01)00503-1
dc.date.updated2015-12-10T11:11:50Z
local.identifier.scopusID2-s2.0-0035338039
CollectionsANU Research Publications

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