Interaction of Defects and Metals with Nanocavities in Silicon
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Williams, James; Ridgway, Mark C; Conway, Martin; Wong-Leung, Jennifer; Zhu, Xiaohua; Petravic, Mladen; Fortuna, Frank Nicholas; Ruault, M-O; Bernas, Harry; Kinomura, A; Nakano, Yukihiro; Hayashi, Yasuhiko
Description
Ion implantation of H or He into silicon, followed by annealing can create a band of nanocavities. Such nanocavities can exhibit a range of interesting and often non-equilibrium interactions with defects and metals during subsequent implantation and annealing. This paper gives an overview of such interactions, concentrating on cavities produced by H-implantation. The evolution of cavities during annealing is briefly treated, followed by illustrations of the very efficient gettering ability of...[Show more]
Collections | ANU Research Publications |
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Date published: | 2001 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/68491 |
Source: | Nuclear Instruments and Methods in Physics Research: Section B |
DOI: | 10.1016/S0168-583X(01)00503-1 |
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01_Williams_Interaction_of_Defects_and_2001.pdf | 775.92 kB | Adobe PDF | Request a copy |
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