Interaction of Defects and Metals with Nanocavities in Silicon
Williams, James; Ridgway, Mark C; Conway, Martin; Wong-Leung, Yin-Yin (Jennifer); Zhu, Xiaohua; Petravic, Mladen; Fortuna, Frank Nicholas; Ruault, M-O; Bernas, Harry; Kinomura, A; Nakano, Yukihiro; Hayashi, Yasuhiko
Ion implantation of H or He into silicon, followed by annealing can create a band of nanocavities. Such nanocavities can exhibit a range of interesting and often non-equilibrium interactions with defects and metals during subsequent implantation and annealing. This paper gives an overview of such interactions, concentrating on cavities produced by H-implantation. The evolution of cavities during annealing is briefly treated, followed by illustrations of the very efficient gettering ability of...[Show more]
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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