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Super Deformability and Young's Modulus of GaAs Nanowires

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Wang, Yan-Bo; Wang, Li-Feng; Joyce, Hannah J; Gao, Qiang; Liao, Xiao-Zhou; Mai, Yiu-Wing; Zou, Jin; Ringer, Simon Peter; Gao, Hua-Jian; Jagadish, Chennupati; Tan, Hark Hoe

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A significant size effect on the mechanical properties of GaAs nanowires (NWs) is reported. A remarkable elastic strain of ≈11% for NWs with diameters of 50-150 nm and obvious plastic deformation in NWs with diameters ≤25 nm are revealed. The Youngs m

dc.contributor.authorWang, Yan-Bo
dc.contributor.authorWang, Li-Feng
dc.contributor.authorJoyce, Hannah J
dc.contributor.authorGao, Qiang
dc.contributor.authorLiao, Xiao-Zhou
dc.contributor.authorMai, Yiu-Wing
dc.contributor.authorZou, Jin
dc.contributor.authorRinger, Simon Peter
dc.contributor.authorGao, Hua-Jian
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-12-10T23:31:09Z
dc.identifier.issn1022-6680
dc.identifier.urihttp://hdl.handle.net/1885/68490
dc.description.abstractA significant size effect on the mechanical properties of GaAs nanowires (NWs) is reported. A remarkable elastic strain of ≈11% for NWs with diameters of 50-150 nm and obvious plastic deformation in NWs with diameters ≤25 nm are revealed. The Youngs m
dc.publisherTrans Tech Publications
dc.sourceAdvanced Materials Research
dc.subjectKeywords: Deformability; Elastic strain; GaAs; semiconductor nanowires; size effects; Young's Modulus; Deformation; Elastic moduli; Gallium alloys; Gallium arsenide; Nanowires; Semiconducting gallium; Size determination; Transmission electron microscopy; Mechanical mechanical properties; semiconductor nanowires; size effects; transmission electron microscopy
dc.titleSuper Deformability and Young's Modulus of GaAs Nanowires
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume23
dc.date.issued2011
local.identifier.absfor100708 - Nanomaterials
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.ariespublicationf2965xPUB1733
local.type.statusPublished Version
local.contributor.affiliationWang, Yan-Bo, University of Sydney
local.contributor.affiliationWang, Li-Feng, University of Sydney
local.contributor.affiliationJoyce, Hannah J, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGao, Qiang, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationLiao, Xiao-Zhou, University of Sydney
local.contributor.affiliationMai, Yiu-Wing, University of Sydney
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationZou, Jin, University of Queensland
local.contributor.affiliationRinger, Simon Peter, University of Sydney
local.contributor.affiliationGao, Hua-Jian, Brown University
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.issue11
local.bibliographicCitation.startpage1356
local.bibliographicCitation.lastpage1360
local.identifier.doi10.1002/adma.201004122
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
dc.date.updated2016-02-24T08:16:35Z
local.identifier.scopusID2-s2.0-79952673376
local.identifier.thomsonID000288331300007
CollectionsANU Research Publications

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