Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon
Silicon samples of n-type have been implanted at room temperature with 5.6-MeV 28Si ions to a dose of 2 × 108 cm-2 and then annealed at temperatures from 100 to 380 °C. Both isothermal and isochronal treatments were performed and the annealing kinetics
|Collections||ANU Research Publications|
|Source:||Physical Review B|
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