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Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon

Pellegrino, P; Leveque, P; Lalita, J; Hallen, A; Jagadish, Chennupati; Svensson, Bengt Gunnar

Description

Silicon samples of n-type have been implanted at room temperature with 5.6-MeV 28Si ions to a dose of 2 × 108 cm-2 and then annealed at temperatures from 100 to 380 °C. Both isothermal and isochronal treatments were performed and the annealing kinetics

CollectionsANU Research Publications
Date published: 2001
Type: Journal article
URI: http://hdl.handle.net/1885/68471
Source: Physical Review B

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