Defect Formation Due to the Crystallization of Deep Amorphous Volumes Formed in Silicon by Mega Electron Volt (MeV) Ion Implantation
Solid-phase epitaxy was examined in deep amorphous volumes formed in silicon wafers by multi-energy self-implantation through a mask. Crystallization was effected at elevated temperatures with the amorphous volume being transformed at both lateral and vertical interfaces. Sample topology was mapped using an atomic force microscope. Details of the process were clarified with both plan-view and cross-sectional transmission electron microscopy analyses. Crystallization of the amorphous volumes...[Show more]
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|Source:||Journal of Materials Research|
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