The crystallisation of deep amorphous wells in silicon produced by ion implantation
The crystallisation of deep amorphous wells is studied. These model systems are formed by high energy self implantation through a mask into silicon. The amorphised regions have an aspect ratio opposite to that employed in previous experiments. At elevated temperatures crystallisation proceeds inwards with the amorphous-phase being transformed through both lateral and vertical solid-phase epitaxy (SPE). Complementary information is obtained from performing plan view and cross-sectional...[Show more]
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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