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The crystallisation of deep amorphous wells in silicon produced by ion implantation

Liu, A C Y; McCallum, Jeffrey C; Wong-Leung, Yin-Yin (Jennifer)

Description

The crystallisation of deep amorphous wells is studied. These model systems are formed by high energy self implantation through a mask into silicon. The amorphised regions have an aspect ratio opposite to that employed in previous experiments. At elevated temperatures crystallisation proceeds inwards with the amorphous-phase being transformed through both lateral and vertical solid-phase epitaxy (SPE). Complementary information is obtained from performing plan view and cross-sectional...[Show more]

CollectionsANU Research Publications
Date published: 2001
Type: Journal article
URI: http://hdl.handle.net/1885/68457
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/S0168-583X(01)00335-4

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