Skip navigation
Skip navigation

The crystallisation of deep amorphous wells in silicon produced by ion implantation

Liu, A C Y; McCallum, Jeffrey C; Wong-Leung, Yin-Yin (Jennifer)


The crystallisation of deep amorphous wells is studied. These model systems are formed by high energy self implantation through a mask into silicon. The amorphised regions have an aspect ratio opposite to that employed in previous experiments. At elevated temperatures crystallisation proceeds inwards with the amorphous-phase being transformed through both lateral and vertical solid-phase epitaxy (SPE). Complementary information is obtained from performing plan view and cross-sectional...[Show more]

CollectionsANU Research Publications
Date published: 2001
Type: Journal article
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/S0168-583X(01)00335-4


File Description SizeFormat Image
01_Liu_The_crystallisation_of_deep_2001.pdf273.54 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  22 January 2019/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator