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Ion Implantation into GaN

Kucheyev, Sergei; Williams, James; Pearton, S J


The current status of ion beam processing of GaN is reviewed. In particular, we discuss the following aspects of ion implantation into GaN: (i) damage build-up and amorphization, (ii) preferential surface disordering and loss of nitrogen during ion bombardment, (iii) ion-beam-induced porosity of amorphous GaN due to material dissociation, (iv) anomalous surface erosion during ion bombardment at elevated temperatures, (v) the effect of implantation disorder on mechanical properties, (vi) current...[Show more]

CollectionsANU Research Publications
Date published: 2001
Type: Journal article
Source: Materials Science and Engineering R-Reports
DOI: 10.1016/S0927-796X(01)00028-6


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