Ion Implantation into GaN
The current status of ion beam processing of GaN is reviewed. In particular, we discuss the following aspects of ion implantation into GaN: (i) damage build-up and amorphization, (ii) preferential surface disordering and loss of nitrogen during ion bombardment, (iii) ion-beam-induced porosity of amorphous GaN due to material dissociation, (iv) anomalous surface erosion during ion bombardment at elevated temperatures, (v) the effect of implantation disorder on mechanical properties, (vi) current...[Show more]
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|01_Kucheyev_Ion_Implantation_into_GaN_2001.pdf||2.68 MB||Adobe PDF||Request a copy|
|02_Kucheyev_Ion_Implantation_into_GaN_2001.pdf||2.68 MB||Adobe PDF||Request a copy|
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