Effect of ion species on the accumulation of ion-beam damage in GaN
Wurtzite GaN epilayers bombarded with a wide range of ion species (10 keV 1H, 40 keV 12C 50 keV 16O, 600 keV 28Si. 130 keV 63Cu, 200 keV 107Ag, 300 keV 197Au, and 500 keV 209Bi) are studied by a combination of Rutherford backscattering/channeling (RBS/C)
|Collections||ANU Research Publications|
|Source:||Physical Review B|
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