High-dose ion implantation into GaN
-
Altmetric Citations
Kucheyev, Sergei; Williams, James; Zou, Jin; Jagadish, Chennupati; Li, Gang
Description
The structural characteristics of wurtzite GaN films bombarded up to high ion doses are studied by a combination of Rutherford backscattering/channeling spectrometry, transmission electron microscopy, and atomic force microscopy. We concentrate on (i) the nature of structural disorder and the consequences of anomalous erosion observed in GaN exposed to ion bombardment at elevated temperatures and (ii) correlation between surface roughness and the development of a porous structure during...[Show more]
Collections | ANU Research Publications |
---|---|
Date published: | 2001 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/68435 |
Source: | Nuclear Instruments and Methods in Physics Research: Section B |
DOI: | 10.1016/S0168-583X(00)00672-8 |
Download
File | Description | Size | Format | Image |
---|---|---|---|---|
01_Kucheyev_High-dose_ion_implantation_2001.pdf | 445.98 kB | Adobe PDF | Request a copy |
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.
Updated: 19 May 2020/ Responsible Officer: University Librarian/ Page Contact: Library Systems & Web Coordinator