The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN
The effects of implant conditions on the damage build-up in wurtzite GaN films are studied by Rutherford backscattering/channeling spectrometry and transmission electron microscopy. The results point to substantial dynamic annealing of radiation defects even during heavy ion (197Au) bombardment at liquid nitrogen (LN2) temperature. A marked similarity between damage build-up for light (12C) and heavy (197Au) ion bombardment regimes at LN2 temperature is observed. However, the damage build-up...[Show more]
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
|01_Kucheyev_The_effects_of_ion_mass,_2001.pdf||421.95 kB||Adobe PDF||Request a copy|
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