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The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN

Kucheyev, Sergei; Williams, James; Zou, Jin; Jagadish, Chennupati; Li, Gang

Description

The effects of implant conditions on the damage build-up in wurtzite GaN films are studied by Rutherford backscattering/channeling spectrometry and transmission electron microscopy. The results point to substantial dynamic annealing of radiation defects even during heavy ion (197Au) bombardment at liquid nitrogen (LN2) temperature. A marked similarity between damage build-up for light (12C) and heavy (197Au) ion bombardment regimes at LN2 temperature is observed. However, the damage build-up...[Show more]

CollectionsANU Research Publications
Date published: 2001
Type: Journal article
URI: http://hdl.handle.net/1885/68417
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/S0168-583X(00)00459-6

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