Skip navigation
Skip navigation

The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN

Kucheyev, Sergei; Williams, James; Zou, Jin; Jagadish, Chennupati; Li, Gang


The effects of implant conditions on the damage build-up in wurtzite GaN films are studied by Rutherford backscattering/channeling spectrometry and transmission electron microscopy. The results point to substantial dynamic annealing of radiation defects even during heavy ion (197Au) bombardment at liquid nitrogen (LN2) temperature. A marked similarity between damage build-up for light (12C) and heavy (197Au) ion bombardment regimes at LN2 temperature is observed. However, the damage build-up...[Show more]

CollectionsANU Research Publications
Date published: 2001
Type: Journal article
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/S0168-583X(00)00459-6


File Description SizeFormat Image
01_Kucheyev_The_effects_of_ion_mass,_2001.pdf421.95 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  17 November 2022/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator