Structural characterisation of amorphised compound semiconductors
-
Altmetric Citations
Ridgway, Mark C; Glover, Christopher; Yu, Kin Man; Foran, Garry J; Lee, T W; Moon, Y; Yoon, Euijoon
Description
Extended X-ray absorption fine structure (EXAFS) has been utilized to measure implantation-induced structural modifications in amorphous GaAs and InP. Relative to crystalline standards, increases in bond length were apparent for both materials. However, the constituent atoms were under- and over-coordinated in amorphous GaAs and InP, respectively, as consistent with the reported decrease and increase in density, respectively. For GaAs, experimental evidence for the presence of homopolar bonding...[Show more]
dc.contributor.author | Ridgway, Mark C | |
---|---|---|
dc.contributor.author | Glover, Christopher | |
dc.contributor.author | Yu, Kin Man | |
dc.contributor.author | Foran, Garry J | |
dc.contributor.author | Lee, T W | |
dc.contributor.author | Moon, Y | |
dc.contributor.author | Yoon, Euijoon | |
dc.date.accessioned | 2015-12-10T23:30:56Z | |
dc.identifier.issn | 0168-583X | |
dc.identifier.uri | http://hdl.handle.net/1885/68398 | |
dc.description.abstract | Extended X-ray absorption fine structure (EXAFS) has been utilized to measure implantation-induced structural modifications in amorphous GaAs and InP. Relative to crystalline standards, increases in bond length were apparent for both materials. However, the constituent atoms were under- and over-coordinated in amorphous GaAs and InP, respectively, as consistent with the reported decrease and increase in density, respectively. For GaAs, experimental evidence for the presence of homopolar bonding in the amorphous phase was apparent though the similarity in atomic number of the two constituents inhibited a quantitative determination. In contrast, homopolar bonding in amorphous InP was readily measurable - In-In bonding comprised ∼14% of the total In bonds. For amorphous GaAs, all structural parameters were independent of ion dose and implantation temperature as consistent with an intrinsic rather than an implant-specific extrinsic structure. | |
dc.publisher | Elsevier | |
dc.source | Nuclear Instruments and Methods in Physics Research: Section B | |
dc.subject | Keywords: Chemical bonds; Chemical modification; Crystalline materials; Ion implantation; Semiconducting gallium arsenide; Semiconducting indium phosphide; Extended X ray absorption fine structure (EXAFS); Amorphous materials Amorphous; EXAFS; GaAs; Implantation; InP | |
dc.title | Structural characterisation of amorphised compound semiconductors | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.description.refereed | Yes | |
local.identifier.citationvolume | 175-177 | |
dc.date.issued | 2001 | |
local.identifier.absfor | 020604 - Quantum Optics | |
local.identifier.ariespublication | MigratedxPub1700 | |
local.type.status | Published Version | |
local.contributor.affiliation | Ridgway, Mark C, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Glover, Christopher, College of Physical and Mathematical Sciences, ANU | |
local.contributor.affiliation | Yu, Kin Man, Lawrence Livermore National Laboratory | |
local.contributor.affiliation | Foran, Garry J, Australian Nuclear Science and Technology Organisation | |
local.contributor.affiliation | Lee, T W, Seoul National University | |
local.contributor.affiliation | Moon, Y, Seoul National University | |
local.contributor.affiliation | Yoon, Euijoon, Seoul National University | |
local.description.embargo | 2037-12-31 | |
local.bibliographicCitation.startpage | 280 | |
local.bibliographicCitation.lastpage | 285 | |
local.identifier.doi | 10.1016/S0168-583X(01)00340-8 | |
dc.date.updated | 2015-12-10T11:10:20Z | |
local.identifier.scopusID | 2-s2.0-0035303201 | |
Collections | ANU Research Publications |
Download
File | Description | Size | Format | Image |
---|---|---|---|---|
01_Ridgway_Structural_characterisation_of_2001.pdf | 106.23 kB | Adobe PDF | Request a copy |
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.
Updated: 17 November 2022/ Responsible Officer: University Librarian/ Page Contact: Library Systems & Web Coordinator