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Structural characterisation of amorphised compound semiconductors

Ridgway, Mark C; Glover, Christopher; Yu, Kin Man; Foran, Garry J; Lee, T W; Moon, Y; Yoon, Euijoon


Extended X-ray absorption fine structure (EXAFS) has been utilized to measure implantation-induced structural modifications in amorphous GaAs and InP. Relative to crystalline standards, increases in bond length were apparent for both materials. However, the constituent atoms were under- and over-coordinated in amorphous GaAs and InP, respectively, as consistent with the reported decrease and increase in density, respectively. For GaAs, experimental evidence for the presence of homopolar bonding...[Show more]

CollectionsANU Research Publications
Date published: 2001
Type: Journal article
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/S0168-583X(01)00340-8


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