Structural characterisation of amorphised compound semiconductors
Extended X-ray absorption fine structure (EXAFS) has been utilized to measure implantation-induced structural modifications in amorphous GaAs and InP. Relative to crystalline standards, increases in bond length were apparent for both materials. However, the constituent atoms were under- and over-coordinated in amorphous GaAs and InP, respectively, as consistent with the reported decrease and increase in density, respectively. For GaAs, experimental evidence for the presence of homopolar bonding...[Show more]
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