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Implantation-induced Disorder in Amorphous Ge: Production and Relaxation

Ridgway, Mark C; Glover, Christopher; Desnica-Frankovic, I D; Furic, K; Yu, Kin Man; Foran, Garry J; Clerc, C; Hansen, Jeffrey; Nylandsted-Larsen, A

Description

Extended X-ray absorption fine structure and Raman spectroscopy have been utilised to measure implantation-induced micro-structural modifications in amorphous Ge including increases in bond length, broadening of the bond-angle distribution, and non-Gaussian static disorder as functions of ion dose. The resulting evolution of the inter-atomic distance distribution, over an ion dose range extending two orders of magnitude beyond that required for amorphisation, demonstrates the influence of...[Show more]

dc.contributor.authorRidgway, Mark C
dc.contributor.authorGlover, Christopher
dc.contributor.authorDesnica-Frankovic, I D
dc.contributor.authorFuric, K
dc.contributor.authorYu, Kin Man
dc.contributor.authorForan, Garry J
dc.contributor.authorClerc, C
dc.contributor.authorHansen, Jeffrey
dc.contributor.authorNylandsted-Larsen, A
dc.date.accessioned2015-12-10T23:30:56Z
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/68395
dc.description.abstractExtended X-ray absorption fine structure and Raman spectroscopy have been utilised to measure implantation-induced micro-structural modifications in amorphous Ge including increases in bond length, broadening of the bond-angle distribution, and non-Gaussian static disorder as functions of ion dose. The resulting evolution of the inter-atomic distance distribution, over an ion dose range extending two orders of magnitude beyond that required for amorphisation, demonstrates the influence of implant conditions on amorphous phase structure. Results are attributed to increased fractions of three- and fivefold coordinated atoms as a means of accommodating implantation-induced point defects in the amorphous phase. In contrast, a common, ion-dose-independent structure is apparent following low-temperature, thermally-induced relaxation as consistent with the annealing of point defects in the amorphous phase. Structural relaxation is manifested by reductions in both bond-length and bond-angle distortion and the relaxation enthalpy for each component has been calculated separately.
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Absorption spectroscopy; Amorphization; Amorphous materials; Annealing; Chemical bonds; Crystal atomic structure; Crystal microstructure; Enthalpy; Ion implantation; Point defects; Raman spectroscopy; Relaxation processes; X ray spectroscopy; Extended X r Amorphous; EXAFS; Ge; Implantation; Raman
dc.titleImplantation-induced Disorder in Amorphous Ge: Production and Relaxation
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume175-177
dc.date.issued2001
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub1699
local.type.statusPublished Version
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGlover, Christopher, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationDesnica-Frankovic, I D, Rudjer Boskovic Institute
local.contributor.affiliationFuric, K, Rudjer Boskovic Institute
local.contributor.affiliationYu, Kin Man, Lawrence Livermore National Laboratory
local.contributor.affiliationForan, Garry J, Australian Nuclear Science and Technology Organisation
local.contributor.affiliationClerc, C, CNRS
local.contributor.affiliationHansen, Jeffrey, University of Aarhus
local.contributor.affiliationNylandsted-Larsen, A, University of Aarhus
local.description.embargo2037-12-31
local.bibliographicCitation.startpage21
local.bibliographicCitation.lastpage25
local.identifier.doi10.1016/S0168-583X(01)00333-0
dc.date.updated2015-12-10T11:10:17Z
local.identifier.scopusID2-s2.0-0035303058
CollectionsANU Research Publications

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