Implantation-induced Disorder in Amorphous Ge: Production and Relaxation
Extended X-ray absorption fine structure and Raman spectroscopy have been utilised to measure implantation-induced micro-structural modifications in amorphous Ge including increases in bond length, broadening of the bond-angle distribution, and non-Gaussian static disorder as functions of ion dose. The resulting evolution of the inter-atomic distance distribution, over an ion dose range extending two orders of magnitude beyond that required for amorphisation, demonstrates the influence of...[Show more]
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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