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Implantation-induced Disorder in Amorphous Ge: Production and Relaxation

Ridgway, Mark C; Glover, Christopher; Desnica-Frankovic, I D; Furic, K; Yu, Kin Man; Foran, Garry J; Clerc, C; Hansen, Jeffrey; Nylandsted-Larsen, A

Description

Extended X-ray absorption fine structure and Raman spectroscopy have been utilised to measure implantation-induced micro-structural modifications in amorphous Ge including increases in bond length, broadening of the bond-angle distribution, and non-Gaussian static disorder as functions of ion dose. The resulting evolution of the inter-atomic distance distribution, over an ion dose range extending two orders of magnitude beyond that required for amorphisation, demonstrates the influence of...[Show more]

CollectionsANU Research Publications
Date published: 2001
Type: Journal article
URI: http://hdl.handle.net/1885/68395
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/S0168-583X(01)00333-0

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