Glover, Christopher; Ridgway, Mark C; Yu, Kin Man; Foran, Garry J; Clerc, C; Hansen, Jeffrey; Nylandsted-Larsen, A
The structure of implantation-induced damage in Ge has been investigated using high resolution extended X-ray absorption fine structure spectroscopy (EXAFS). EXAFS data analysis was performed with the Cumulant Method. For the crystalline-to-amorphous transformation, a progressive increase in bond-length was observed without the presence of an asymmetry in interatomic distance distribution (RDF). Beyond the amorphization threshold the RDF was dose dependent and asymmetric, where the bond-length...[Show more]
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