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Structure and Low-temperature Thermal Relaxation of Ion-implanted Germanium

Glover, Christopher; Ridgway, Mark C; Yu, Kin Man; Foran, Garry J; Clerc, C; Hansen, Jeffrey; Nylandsted-Larsen, A

Description

The structure of implantation-induced damage in Ge has been investigated using high resolution extended X-ray absorption fine structure spectroscopy (EXAFS). EXAFS data analysis was performed with the Cumulant Method. For the crystalline-to-amorphous transformation, a progressive increase in bond-length was observed without the presence of an asymmetry in interatomic distance distribution (RDF). Beyond the amorphization threshold the RDF was dose dependent and asymmetric, where the bond-length...[Show more]

CollectionsANU Research Publications
Date published: 2001
Type: Journal article
URI: http://hdl.handle.net/1885/68390
Source: Journal of Synchrotron Radiation
DOI: 10.1107/S0909049500012620

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