Glover, Christopher; Ridgway, Mark C; Yu, Kin Man; Foran, Garry J; Desnica-Frankovic, I D; Clerc, C; Hansen, Jeffrey; Nylandsted-Larsen, A
Low-temperature structural relaxation in amorphized Ge has been characterized by extended x-ray-absorption fine-structure spectroscopy and Raman spectroscopy. A relaxation-temperature-dependent decrease in the mean value and asymmetry of the interatomic distance distribution has been shown to accompany the well-documented reduction in bond angle distribution. While the initial, as-implanted state of amorphous Ge was ion-dose dependent, relaxation at 200 °C yielded a common ion-dose-independent...[Show more]
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