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Measurement of the damage profile of ion-implanted GaAs using an automated optical profiler

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Gal, Michael; Wengler, M; Ilyas, S; Rofii, I; Jagadish, Chennupati; Tan, Hark Hoe

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We describe an easy-to-use, computer-controlled optical method capable of determining the damage profiles in ion-implanted semiconductors. Using this method we measured the damage profiles in Si-implanted GaAs of various ion energies and ion doses. The resulting damage profiles are in good agreement with the total vacancy profiles generated by the transport of ions in matter (TRIM95), and the observed channelling effects not included in the TRIM calculations.

dc.contributor.authorGal, Michael
dc.contributor.authorWengler, M
dc.contributor.authorIlyas, S
dc.contributor.authorRofii, I
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-12-10T23:30:54Z
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/68378
dc.description.abstractWe describe an easy-to-use, computer-controlled optical method capable of determining the damage profiles in ion-implanted semiconductors. Using this method we measured the damage profiles in Si-implanted GaAs of various ion energies and ion doses. The resulting damage profiles are in good agreement with the total vacancy profiles generated by the transport of ions in matter (TRIM95), and the observed channelling effects not included in the TRIM calculations.
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Computer control; Ion implantation; Radiation damage; Silicon; Automated optical profiler; Computer-controlled optical method; Semiconducting gallium arsenide
dc.titleMeasurement of the damage profile of ion-implanted GaAs using an automated optical profiler
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume173
dc.date.issued2001
local.identifier.absfor020204 - Plasma Physics; Fusion Plasmas; Electrical Discharges
local.identifier.ariespublicationMigratedxPub1695
local.type.statusPublished Version
local.contributor.affiliationGal, Michael, University of New South Wales
local.contributor.affiliationWengler, M, University of New South Wales
local.contributor.affiliationIlyas, S, University of New South Wales
local.contributor.affiliationRofii, I, University of New South Wales
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.startpage528
local.bibliographicCitation.lastpage532
local.identifier.doi10.1016/S0168-583X(00)00407-9
dc.date.updated2015-12-10T11:10:02Z
local.identifier.scopusID2-s2.0-0035252475
CollectionsANU Research Publications

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