Measurement of the damage profile of ion-implanted GaAs using an automated optical profiler
We describe an easy-to-use, computer-controlled optical method capable of determining the damage profiles in ion-implanted semiconductors. Using this method we measured the damage profiles in Si-implanted GaAs of various ion energies and ion doses. The resulting damage profiles are in good agreement with the total vacancy profiles generated by the transport of ions in matter (TRIM95), and the observed channelling effects not included in the TRIM calculations.
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
|01_Gal_Measurement_of_the_damage_2001.pdf||116.8 kB||Adobe PDF||Request a copy|
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