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Structural Modifications in Amorphous Ge Produced by Ion Implantation

Desnica-Frankovic, I D; Furic, K; Desnica, U V; Ridgway, Mark C; Glover, Christopher

Description

Raman spectroscopy was used to analyze structural modifications of monocrystalline Ge implanted with 3 × 1012 to 3 × 1016 cm-274Ge ions, at either room temperature (RT) or liquid nitrogen (LN) temperature. In all implanted samples, beyond the amorphizat

CollectionsANU Research Publications
Date published: 2001
Type: Journal article
URI: http://hdl.handle.net/1885/68353
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/S0168-583X(00)00489-4

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