Skip navigation
Skip navigation

Defect engineering in annealed n-type GaAs epilayers using SiO 2 /Si 3 N 4 stacking layers

CollectionsANU Research Publications
Date published: 2001
Type: Journal article
Source: Applied Physics Letters


There are no files associated with this item.

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  22 January 2019/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator