Dao, Lap Van; Gal, Michael; Fu, Lan; Tan, Hoe Hark; Jagadish, Chennupati
We have measured the carrier capture times into intermixed In0.15Ga0.85As/Al0.2Ga0.8As quantum wells using the photoluminescence up-conversion technique. We confirm that the carrier capture into intermixed quantum wells is significantly shorter than capture into similar but nonintermixed samples. Using below and above band-gap excitation we were able to separate the various components effecting the carrier capture into the quantum well. We show that the reduction in the carrier capture times is...[Show more]
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