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Effect of Stress on Impurity-free quantum well intermixing

Deenapanray, Prakash; Jagadish, Chennupati

Description

Impurity-free interdiffusion of GaAs/AlGaAs quantum wells was investigated for SiOx capping layers grown by plasma-enhanced chemical vapor deposition. Dielectric layers were deposited for various nitrous oxide flow rates, N(30 sccm ≤ N ≤ 710 sccm), wh

CollectionsANU Research Publications
Date published: 2001
Type: Journal article
URI: http://hdl.handle.net/1885/68290
Source: Electrochemical and Solid-State Letters
DOI: 10.1149/1.1339242

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