Effect of Stress on Impurity-free quantum well intermixing
Impurity-free interdiffusion of GaAs/AlGaAs quantum wells was investigated for SiOx capping layers grown by plasma-enhanced chemical vapor deposition. Dielectric layers were deposited for various nitrous oxide flow rates, N(30 sccm ≤ N ≤ 710 sccm), wh
|Collections||ANU Research Publications|
|Source:||Electrochemical and Solid-State Letters|
|01_Deenapanray_Effect_of_Stress_on_2001.pdf||67.49 kB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.