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Amorphous Zone Evolution in Si During Elevated Temperature Ion Bombardment

Kucheyev, Sergei

Description

Evolution of amorphous zones (a-zones) in Si during elevated temperature ion/electron bombardment is considered. Consideration is based on a point defect diffusion model for the ion-beam-induced amorphous-crystalline (a/c) phase transformation in Si. Direct thermal annealing and an additional interfacial driving force for crystallization are taken into account. The problem of a-zone size distribution during ion bombardment is addressed and solved for a particular annealing situation. Possible...[Show more]

CollectionsANU Research Publications
Date published: 2001
Type: Journal article
URI: http://hdl.handle.net/1885/68223
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/S0168-583X(00)00508-5

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