Amorphous Zone Evolution in Si During Elevated Temperature Ion Bombardment
Evolution of amorphous zones (a-zones) in Si during elevated temperature ion/electron bombardment is considered. Consideration is based on a point defect diffusion model for the ion-beam-induced amorphous-crystalline (a/c) phase transformation in Si. Direct thermal annealing and an additional interfacial driving force for crystallization are taken into account. The problem of a-zone size distribution during ion bombardment is addressed and solved for a particular annealing situation. Possible...[Show more]
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|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
|01_Kucheyev_Amorphous_Zone_Evolution_in_Si_2001.pdf||503.51 kB||Adobe PDF||Request a copy|
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