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Behavior of aluminum oxide, intermetallics and voids in Cu-Al wire bonds

Xu, H; Liu, C; Silberschmidt, V V; Pramana, Stevin S; White, Timothy; Chen, Z; Acoff, V L


Nanoscale interfacial evolution in Cu-Al wire bonds during isothermal annealing from 175 °C to 250 °C was investigated by high resolution transmission electron microscopy (HRTEM). The native aluminum oxide film (∼5 nm thick) of the Al pad migrates tow

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
Source: Acta Materialia
DOI: 10.1016/j.actamat.2011.05.041


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